PART |
Description |
Maker |
KSA1220A KSA1220 KSA1220AOS KSA1220AYS KSA1220AYST |
PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier High Frequency Power Amplifier 1.2 A, 160 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
2SC2873 E000768 |
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) 晶体管(功率放大器,开关应用) TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS) POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS From old datasheet system
|
Toshiba, Corp. Toshiba Semiconductor
|
2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS 3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
|
TOSHIBA
|
2SA1899 2SA1899O |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SC-71 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SD2449 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications
|
TOSHIBA
|
2SC2983 E000778 |
TRANSISTOR (POWER/ DIRVER STAGE AMPLIFIER APPLICATIONS) POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS From old datasheet system TRANSISTOR (POWER, DIRVER STAGE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
2SA1804 E000563 |
TRANSISTOR (POWER AMPLIFIER APPLICATIONS) From old datasheet system TRANSISTOR (POWER AMPLIFIER APPLICATIONS) 晶体管(功率放大器应用)
|
TOSHIBA[Toshiba Semiconductor] AVX, Corp.
|
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
KTA1726 |
General Purpose Transistor EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|